ds18001 rev. p-2 1 of 3 bzx84c2v4 - bzx84c51 bzx84c2v4 - bzx84c51 features planar die construction 350mw power dissipation zener voltages from 2.4v - 51v ideally suited for automated assembly processes a e j l top view m b c h g d k sot-23 dim min max a 0.37 0.51 b 1.19 1.40 c 2.10 2.50 d 0.89 1.05 e 0.45 0.61 g 1.78 2.05 h 2.65 3.05 j 0.013 0.15 k 0.89 1.10 l 0.45 0.61 m 0.076 0.178 all dimensions in mm characteristic symbol value unit forward voltage@ i f = 10ma v f 0.9v power dissipation (note 1) p d 350 mw thermal resistance, junction to ambient air (note 1) r ja 357 k/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. valid provided that device terminals are kept at ambient temperature. 2. tested with pulses, 300 s pulse width, period = 5ms. 3. f = 1khz. maximum ratings @ t a = 25 c unless otherwise specified jiangsu changjiang electronics technology co., l td so t - 23 plastic-enca p sulate diode
ds18001 rev. p-2 2 of 3 bzx84c2v4 - bzx84c51 type number marking code zener voltage range (note 2) maximum zener impedance (note 3) maximum reverse current typical temperature coefficient @i zt mv/ c v z @i zt i zt z zt @ i zt z zk @i zk i r v r min max nom (v) min (v) max (v) (ma) ( )( ) (ma) ( a) (v) bzx84c2v4 z11/kzb 2.4 2.2 2.6 5.0 100 600 1.0 50 1.0 -3.5 0 bzx84c2v7 z12/kzc 2.7 2.5 2.9 5.0 100 600 1.0 20 1.0 -3.5 0 bzx84c3v0 z13/kzd 3.0 2.8 3.2 5.0 95 600 1.0 10 1.0 -3.5 0 bzx84c3v3 z14/kze 3.3 3.1 3.5 5.0 95 600 1.0 5.0 1.0 -3.5 0 bzx84c3v6 z15/kzf 3.6 3.4 3.8 5.0 90 600 1.0 5.0 1.0 -3.5 0 bzx84c3v9 z16/kzg 3.9 3.7 4.1 5.0 90 600 1.0 3.0 1.0 -3.5 0 bzx84c4v3 z17/kzh 4.3 4.0 4.6 5.0 90 600 1.0 3.0 1.0 -3.5 0 bzx84c4v7 z1/kz1 4.7 4.4 5.0 5.0 80 500 1.0 3.0 2.0 -3.5 0.2 bzx84c5v1 z2/kz2 5.1 4.8 5.4 5.0 60 480 1.0 2.0 2.0 -2.7 1.2 bzx84c5v6 z3/kz3 5.6 5.2 6.0 5.0 40 400 1.0 1.0 2.0 -2.0 2.5 bzx84c6v2 z4/kz4 6.2 5.8 6.6 5.0 10 150 1.0 3.0 4.0 0.4 3.7 bzx84c6v8 z5/kz5 6.8 6.4 7.2 5.0 15 80 1.0 2.0 4.0 1.2 4.5 bzx84c7v5 z6/kz6 7.5 7.0 7.9 5.0 15 80 1.0 1.0 5.0 2.5 5.3 bzx84c8v2 z7/kz7 8.2 7.7 8.7 5.0 15 80 1.0 0.7 5.0 3.2 6.2 bzx84c9v1 z8/kz8 9.1 8.5 9.6 5.0 15 100 1.0 0.5 6.0 3.8 7.0 bzx84c10 z9/kz9/8q 10 9.4 10.6 5.0 20 150 1.0 0.2 7.0 4.5 8.0 bzx84c11 y1/ky1 11 10.4 11.6 5.0 20 150 1.0 0.1 8.0 5.4 9.0 bzx84c12 y2/ky2 12 11.4 12.7 5.0 25 150 1.0 0.1 8.0 6.0 10.0 bzx84c13 y3/ky3 13 12.4 14.1 5.0 30 170 1.0 0.1 8.0 7.0 11.0 bzx84c15 y4/ky4 15 13.8 15.6 5.0 30 200 1.0 0.1 10.5 9.2 13.0 bzx84c16 y5/ky5 16 15.3 17.1 5.0 40 200 1.0 0.1 11.2 10.4 14.0 bzx84c18 y6/ky6 18 16.8 19.1 5.0 45 225 1.0 0.1 12.6 12.4 16.0 bzx84c20 y7/ky7 20 18.8 21.2 5.0 55 225 1.0 0.1 14.0 14.4 18.0 bzx84c22 y8/ky8 22 20.8 23.3 5.0 55 250 1.0 0.1 15.4 16.4 20.0 bzx84c24 y9/ky9 24 22.8 25.6 5.0 70 250 1.0 0.1 16.8 18.4 22.0 bzx84c27 y10/kya 27 25.1 28.9 2.0 80 300 0.5 0.1 18.9 21.4 25.3 bzx84c30 y11/kyb 30 28.0 32.0 2.0 80 300 0.5 0.1 21.0 24.4 29.4 bzx84c33 y12/kyc 33 31.0 35.0 2.0 80 325 0.5 0.1 23.1 27.4 33.4 bzx84c36 y13/kyd 36 34.0 38.0 2.0 90 350 0.5 0.1 25.2 30.4 37.4 bzx84c39 y14/kye 39 37.0 41.0 2.0 130 350 0.5 0.1 27.3 33.4 41.2 bzx84c43 y15/kyf 43 40.0 46.0 2.0 150 375 0.5 0.1 30.1 10.0 12.0 bzx84c47 y16/kyg 47 44.0 50.0 2.0 170 375 0.5 0.1 32.9 10.0 12.0 bzx84c51 y17/kyh 51 48.0 54.0 2.0 180 400 0.5 0.1 35.7 10.0 12.0 electrical characteristics @ t a = 25 c unless otherwise specified notes: 1. valid provided that device terminals are kept at ambient temperature. 2. tested with pulses, 300 s pulse width, period = 5ms. 3. f = 1khz.
ds18001 rev. p-2 3 of 3 bzx84c2v4 - bzx84c51 0 10 20 30 40 50 01 2 3 4 5 6 7 8910 i , zener current (ma) z v , zener voltage (v) fi g . 2 zener breakdown characteristics z t = 25c j c2v7 c3v3 c3v9 c4v7 c5v6 c6v8 c8v2 test current i 5.0ma z 0 2 4 6 8 10 10 20 30 40 50 60 70 80 90 100 i , zener current (ma) z v , zener voltage (v) fi g . 4 zener breakdown characteristics z tj = 25c test current i 2ma z c39 c43 c47 c51 c , junction cap acitance (pf) j 10 100 1000 10 100 1 v , nominal zener voltage (v) fig. 5 junction capacitance vs nominal zener voltage z t = 25 c j v=1v r v=2v r v=1v r v=2v r 400 t , ambient temperature, (c) a fi g . 1 power deratin g curve p , power dissipation (mw) d see note 1 200 100 300 0 5 00 0 100 200 0 10 20 30 0 i , zener current (ma) z v , zener voltage (v) fi g . 3 zener breakdown characteristics z 10 20 30 40 t = 25c j test current i 5ma z test current i 2ma z c10 c12 c18 c22 c27 c33 c36 c15
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